NEW SILICON MAGNETIC FIELD SENSOR

YIG Film for Magnetic Field Sensor

Single crystal Y3Fe5O12 (YIG) lm was grown onto (111) oriented gadolinium gallium garnet (GGG) substrate by the liquid phase epitaxy (PLD) technique. The X-ray di raction measurements showed that epitaxial growth of the lm along its (111) axis. The surface characteristic was investigated by atomic force microscopy (AFM) measurement. The magnetic eld sensor consisted of a rectangular shape with ...

Electro - Mechanical Resonant Magnetic Field Sensor

We describe a new type of magnetic field sensor which is termed an ElectroMechanical Resonant Sensor (EMRS). The key part of this sensor is a small conductive elastic element with low damping rate and therefore a high Q fundamental mode of frequency f1. An AC current is driven through the elastic element which, in the presence of a magnetic field, causes an AC force on the element. When the fre...

A monolithic field-effect-transistor-amplified magnetic field sensor

We propose and demonstrate the operation of a monolithic field-effect-transistor-amplified magnetic field sensor device, in which a tunnel-magnetoresistive ~TMR! material is incorporated within the gate of a Si metal–oxide–semiconductor–field-effect transistor. A fixed voltage is applied across the TMR layer, which leads charge to build up within the gate. Applying or changing an external magne...

An integrated magnetic sensor : the silicon on sapphire Schottky magnetodiode

2014 The Schottky magnetodiode is the combination of two basic phenomena : the magnetodiode effect in double-injecting P+ NN+ structures and the effect of the carrier density modulation on the Schottky reverse current. Our devices, realized in SOS technology, denote magnetosensitivities of about 10 V/T. We investigate the influence of the geometrical parameters, injection rate and doping level ...

Silicon Carbide UV Sensor and Junction Field - Effect